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Gallium(II) telluride

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Gallium(II) telluride
Gallium(II) telluride
Gallium(II) telluride
Names
Other names gallium telluride
Identifiers
CAS Number
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.031.524 Edit this at Wikidata
EC Number
  • 234-690-1
PubChem CID
CompTox Dashboard (EPA)
InChI
  • InChI=1S/Ga.TeKey: OFIYHXOOOISSDN-UHFFFAOYSA-N
SMILES
  • ==
Properties
Chemical formula GaTe
Molar mass 197.32 g/mol
Appearance black pieces
Density 5.44 g/cm, solid
Melting point 824 °C (1,515 °F; 1,097 K)
Structure
Crystal structure hexagonal, hP8
Space group P63/mmc, No. 194
Hazards
NFPA 704 (fire diamond)
NFPA 704 four-colored diamondHealth 4: Very short exposure could cause death or major residual injury. E.g. VX gasFlammability 0: Will not burn. E.g. waterInstability 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g. liquid nitrogenSpecial hazards (white): no code
4 0 0
Related compounds
Other anions gallium(II) oxide, gallium(II) sulfide, gallium monoselenide
Other cations zinc(II) telluride, germanium(II) telluride, indium(II) telluride
Related compounds gallium(III) telluride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). checkY verify (what is  ?) Infobox references
Chemical compound

Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the electronics industry. Gallium telluride can be made by reacting the elements or by metal organic vapour deposition (MOCVD).

GaTe produced from the elements has a monoclinic crystal structure. Each gallium atom is tetrahedrally coordinated by 3 tellurium and one gallium atom. The gallium-gallium bond length in the Ga2 unit is 2.43 Angstrom. The structure consists of layers and can be formulated as Ga2 2Te. The bonding within the layers is ionic-covalent and between the layers is predominantly van der Waals. GaTe is classified as a layered semiconductor (like GaSe and InSe which have similar structures). It is a direct band gap semiconductor with an energy of 1.65eV at room temperature. A hexagonal form can be produced by low pressure metal organic vapour deposition (MOCVD) from alkyl gallium telluride cubane-type clusters e.g. from (t-butylGa( μ3-Te))4. The core consists of a cube of eight atoms, four gallium, and four tellurium atoms. Each gallium has an attached t-butyl group and three adjacent tellurium atoms and each tellurium has three adjacent gallium atoms. The hexagonal form, which is closely related to the monoclinic form, containing Ga2 units, converts to the monoclinic form when annealed at 500 °C.

References

Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 978-0-08-037941-8.

  1. ^ Chemical Vapor Deposition of Hexagonal Gallium Selenide and Telluride Films from Cubane Precursors: Understanding the Envelope of Molecular Control, E. G. Gillan and A. R. Barron Chem. Mater., 9 (12), 3037-3048, 1997.
  2. Monotellurure de gallium, GaTe, Julien-Pouzol M., Jaulmes S., Guittard M., Alapini F., Acta Crystallographica B. Vol. 35, no. 12, pp. 2848-2851. 15 Dec. 1979 doi:10.1107/S0567740879010803
  3. Anharmonicity in GaTe layered crystals, A. Aydinli, N. M. Gasanly, A. Uka, H. Efeoglu, Cryst. Res. Technol. 37 (2002) 12, pp. 1303–1309
Gallium compounds
Gallium(−V)
Gallium(I)
Gallium(II)
Gallium(I,III)
Gallium(III)
Organogallium(III) compounds
  • Ga(C5H7O2)3
  • Ga(CH3)3
  • Ga(C2H5)3
    • Salts and covalent derivatives of the telluride ion
    H2Te
    -TeH     		He
    Li2Te BeTe B CTe2
    (CH3)2Te     		(NH4)2Te O F Ne
    Na2Te MgTe Al2Te3 Si P0.8Te0.2 S Cl Ar
    K2Te CaTe Sc2Te3 Ti VTe2 CrTe
    Cr2Te3     		MnTe
    MnTe2     		FeTe CoTe NiTe Cu2Te
    CuTe
    CuTe2     		ZnTe GaTe
    Ga2Te3
    -Ga     		GeTe
    -Ge     		As2Te3
    As4Te3
    +As     		Se +Br Kr
    Rb2Te SrTe Y2Te3 ZrTe5 NbTe2 MoTe2 Tc Ru Rh Pd Ag2Te CdTe In2Te3 SnTe
    SnTe2     		Sb2Te3 Te
    Te
    n         		I Xe
    Cs2Te BaTe * LuTe
    Lu2Te3     		HfTe5 TaTe2 WTe2
    WTe3     		ReTe2 Os Ir Pt AuxTey HgTe Tl2Te PbTe Bi2Te3 Po At Rn
    Fr RaTe ** Lr Rf Db Sg Bh Hs Mt Ds Rg Cn Nh Fl Mc Lv Ts Og
     
    * LaTe
    La2Te3     		CeTe
    Ce2Te3     		PrTe
    Pr2Te3     		NdTe
    Nd2Te3     		Pm SmTe
    Sm2Te3     		EuTe
    Eu2Te3     		GdTe
    Gd2Te3     		TbTe
    Tb2Te3     		DyTe
    Dy2Te3     		HoTe
    Ho2Te3     		ErTe
    Er2Te3     		TmTe
    Tm2Te3     		YbTe
    Yb2Te3
    ** Ac ThTe2 Pa UTe2 Np Pu Am Cm Bk Cf Es Fm Md No
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